Process Design Kit
Device List for Analog Power
Using a 0.13 um design, this provides analog mixed-signal products with a power supply of 1.5V/5V and DMOS up to 96V.
| Process Type | CD-0.13G3/G4 | BCD-0.13G3 | BCD-0.13G4 |
|---|---|---|---|
|
CMOS Power Supply (Vdd) |
1.5/5.0V | 1.5/5.0V | 1.5/5.0V |
| DMOS | 18V, 25V, 30V, 40V, 50V |
25V, 40V, 50V, 60V, 80V, 96V |
25V*, 40V, 50V, 60V, 80V* |
| Bipolar | NPN,PNP | NPN,PNP | NPN,PNP |
| Layers | 1P3M～5M | 1P4M～5M | 1P3M～5M |
| Metal |
Al UTM(Cu 3.5μm) Cu plating(5.5μm～) |
Cu UTM(Cu 3.5μm) Cu plating(5.5μm～) |
Al UTM(Cu 3.5μm) |
| NV-Memory | e-Fuse | e-Fuse | e-Fuse |
|
Buried Layer Isolation |
Yes N GuardRing |
Yes Deep Trench |
Yes Deep Trench |
| Others | MOS-Cap, MIM-Cap*, MOM-Cap, Zener, MR/HR, SHR | MOS-Cap, MOM-Cap, Zener, MR/HR, SHR | MOS-Cap, MIM-Cap**, MOM-Cap, Zener, MR/HR, SHR |
■Standard PDK(Process Design Kit)：Design Rule, SPICE Model,
Device Parameters, check Command File(DRC,LVS)
■Design Interface：GDS interface
■NV-Memory Flash：Under Development
*：Under Development
**：Planning
Device List for Logic
Based on a 0.13 um design, this supports the multiple power supplies of 1.5V/3.3V/5V, and can be used in a variety of applications such as CMOS logic and analog front-end.
| CMOS 0.13μm | |||
|---|---|---|---|
| Power Supply Voltage (Vdd) | 1.5/3.3 V | 1.5/5 V | |
| Embedded Memory | SRAM*2 | ✔ | ✔ |
| OTP | Poly Fuse*1, *3 | Poly Fuse*1, *3 | |
| Flash*3 | -- | -- | |
| Layers | 1P4M～1P6M | 1P4M～1P6M | |
| Others |
MOS-Cap, MOM-Cap, MR, HR, Deep N Well option for
Isolation Bipolar Type Diode for Analog Circuit(NPN/PNP*4) |
||
■Standard PDK(Process Dsign Kit)：Design Rule, Spice Model, Device
Parameters, check Command File(DRC,LVS)
■Design Interface：GDS interface
*1：Engineering Ver.Ready
*2：1.5V Low Leak CMOS is required
*3：Under Development
*4：Base and Collector terminals of both devices must be connected
each